The Semiconductor R&D center brings together the company’s advanced logic and memory process research teams into one organization to realize synergies in various areas including new materials, transistor structures, and early access to leading edge process equipment.

This will enable the company’s foundry customers to deliver silicon solutions that are optimized for performance, power consumption and area.

Samsung Foundry, one of the key growth engines of Samsung Electronics, offers advanced logic process manufacturing to Fabless and IDM companies. Currently in mass production at 45 nanometer (nm), Samsung is also preparing next generation 32-/28-nm and beyond process technologies through its continued participation in the IBM Technology Alliance.

According to the company, the Semiconductor R&D center is focused on next generation semiconductor process development for both memory and logic applications, including sub-28nm process technology. At these advanced nodes, the company will leverage memory process development advancements to foundry logic process development and vice versa.

The company has said that expected synergies include a broad spectrum of technologies including High-K, 3D transistors, and advanced lithography such as extreme ultra violet. Additionally, the company’s Semiconductor R&D center is developing innovative interconnect and packaging solutions for these deep sub-micron technology nodes including through silicon via, where vertically stacked chips are connected with through silicon vias to enhance speed and performance.

Kinam Kim, executive vice president and general manager of Samsung Electronics’ Semiconductor R&D center, said: “High-performance and low power are no longer mutually exclusive, there is critical R&D work to be done at the most advanced process nodes with regards to minimizing power consumption while incorporating a feature rich menu of devices for designers to create innovative next-generation mobile and high performance SoC devices.”

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