According to the agreement, Elpida will provide advanced DRAM process and product technologies to ProMOS, while ProMOS will provide certain amount of manufacturing capacity at ProMOS' Taichung 300mm wafer fab to Elpida for the manufacturing of Elpida's advanced 1Gb DDR3 device. Trial runs will be completed in the first half of 2010, with mass production following in the second half of the same year.

ML Chen, president and chairman of ProMOS Technologies, said: “Elpida has long been globally recognized as a leader in the development of leading edge DRAM technologies. The synergistic partnership built through this agreement will combine strengths from both companies.”

Yukio Sakamoto, president and CEO of Elpida Memory, said: “We are very pleased to enter into this foundry agreement with ProMOS. We are confident that the combination of Elpida's advanced technology and ProMOS's highly-efficient, large-scale DRAM manufacturing capabilities will enable an outstanding supply of high-performance and high-quality DRAM products.”

Will this agreement benefit Elpida and ProMOS?

Have your say and discuss with your peers on the InfoGrok community.

Participate by posting your comments now.